个人简述:

廖敏，男，博士，湖南省青年百人计划特聘专家。2006年和2009年分别本科和硕士毕业于湘潭大学微电子学专业和微电子学与固体电子学专业。硕士毕业后在日本东京工业大学物理电子系统工程专业攻读博士学位。由于突出的表现，在博士期间获得了日本学术振兴会 (JSPS) 博士特别研究员奖励(DC2)。2012年获得工学博士学位后，在JSPS基金的资助下，在该校继续从事微电子器件集成工艺方面的研究。2013年，加入该校元素战略研究中心，2015年被聘为该研究中心的助理教授。2016年2月入选为湖南省2015年度“百人计划”（青年百人计划）专家。

科研工作:

部分期刊论文
[1] M. Liao, S. Takemoto, Z. Xiao, Y. Toda, T. Tada, S. Ueda, T. Kamiya, and H. Hosono, “Difficulty of carrier generation in orthorhombic PbO”, J. Appl. Phys., 119, 165701 (2016).[2] M. Liao, Z. Xiao, F. -Y. Ran, H. Kumomi, T. Kamiya, and H. Hosono, “Effects of Pb doping on hole transport properties and thin-film transistor characteristics of SnO thin films”, ECS J. Solid State Sci. Technol., 2015, 4: Q26-Q30.[3] M. Liao, H. Ishiwara, and S. Ohmi, “Excellent current drivability and environmental stability in room-temperature-fabricated pentacene-based organic field-effect transistors with HfO2 gate insulators”, IEEE Trans. Electron Device, 2014, 61: 569-575 (2014).[4] M. Liao, H. Ishiwara, and S. Ohmi, “Room-temperature fabrication of HfON gate insulator for low-voltage-operating pentacene-based organic field-effect transistors”, Jpn. J. Appl. Phys., 2012, 51: 04DK01-1 - 04DK01-4.[5] M. Liao, H. Ishiwara, and S. Ohmi, “Growth mechanism of pentacene on HfON gate insulator and its effect on electrical properties of organic field-effect transistors”, IEICE Trans. Electron., 2012, E95-C: 885-890.[6] M. Liao, H. Ishiwara, and S. Ohmi, “Fully room-temperature-fabricated low-voltage operating pentacene-based organic field-effect transistors with HfON gate insulator”, IEEE Electron Device Lett., 2011, 32: 1600-1602.[7] M. Liao, H. Ishiwara, and S. Ohmi, “Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator”, IEICE Electron. Express, 2011, 8: 1461-1466.[8] M. Liao, X. L. Zhong, J. B. Wang, S. H. Xie, and Y. C. Zhou, “Structure and electrical properties of Bi3.15Nd0.85Ti3O12 nanofibers synthesized by electrospinning and sol-gel method”, Appl. Phys. Lett., 96, pp. 012904-1 - 012904-3 (2010).[9] M. Liao, X. L. Zhong, Y. Qiao, J. B. Wang, Y. C. Zhou, and H. Liao, “Effects of film thickness on microstructures and properties of Bi3.15Nd0.85Ti3O12 thin films fabricated by chemical solution deposition”, J. Alloys. Compd., 487, pp. 331-334 (2009).[10] M. Liao, X. L. Zhong, J. B. Wang, Y. C. Zhou, and H. Liao, “Effects of CoFe2O4 content on the properties of nanoparticulate Bi3.15Nd0.85Ti3O12-CoFe2O4 thin films”, Scripta mater., 58, pp. 715-718 (2008).

教育背景:

理学学士(B.S.),          2002.9-2006.6,  中国, 湘潭大学, 微电子学工学硕士(M.E.),          2006.9-2009.6 中国, 湘潭大学, 微电子学与固体电子学工学博士(Dr. Eng.),      2009.10-2012.9, 日本, 东京工业大学, 物理电子系统工程