个人简述:

王德君，电子信息与电气工程学部控制科学与工程学院教授，博士生导师。
吉林大学半导体化学专业本科、硕士，清华大学材料学博士，先后服务于北京大学、名古屋大学和奈良先端科学技术大学院大学，现大连理工大学教授，博士生导师（微电子、控制）。

研究方向:
1.传感器与传感网；飞行器智能电子控制及安全SensorChip,Intelligentelectronicsafetycontrol
2.半导体SiC、GaN器件科学SemiconductorSiC&GaNDevicePhysicsandTechnology;
3.半导体缺陷物理学SemiconductorDefectPhysics;
4.集成电路技术Si3DP/GSIcTechnologies

课题组重视学术交流、国际化和对外合作，近五年，指导研究生在国际顶级学术期刊发表学术论文十余篇，培养的研究生多次获得博士生优秀论文单项奖学金和国家优秀学生奖学金，深受业界欢迎。

Prof.DejunWANGreceivedtheB.S.andM.S.degreeinsemiconductorsfromJilinUniversity,Changchun,China;andthePh.D.degreeinmaterialssciencefromTsinghuaUniversity,Beijing,China.HehasworkedinPekingUniversity,NagoyaUniversityandNaraInstituteofScienceandTechnology.
Prof.WangjoinedDalianUniversityofTechnology(DUT)in2004asaprofessorinthefieldofmicroelectronics.Hisresearchinterestsaresemiconductordefectphysics,semiconductorSiC&GaNdevicephysicsandtechnology,Si3DP/GSIctechnologies,sensorchip,andintelligentelectronicsafetycontrol.TherecentworkmainlyincludesthephysicsandtechnologyofSiO2/SiCinterfaces,metal-SiCcontacts,oxidationtechnologyofSiCsemiconductor,andthedevelopmentofGaNpowerdevices.

Publications
[10]刘冰冰等.PassivationofSiCsurface.AppliedPhysicsLetters,104:202101(2014)
[09]江..滢等.FieldisolationforGaNMOSFETs.Semicond.Sci.&Tech.,29:055002(2014)
[08]王青鹏等.CharacterizationofGaNMOSFETs.IEEETrans.onElectronDevices,61:498(2014)
[07]朱巧智等.Electricalandphysicalpropertiesof4H-SiCMOSinterface.PhysicaB,432:89(2014)
[06]李文波等.OxidationofstepedgesonSiCsurfaces.AppliedPhysicsLetters,103:211603(2013)
[05]朱巧智等.PassivationofSiO2/SiCinterfacetraps.AppliedPhysicsLetters,103:062105(2013)
[04]黄玲琴等.Barrierofmetal/SiCcontacts.AppliedPhysicsLetters,103:033520(2013)
[03]李文波等.InsightintotheOxidationanddefectsofSiC.PhysicalReviewB,87:085320(2013)
[02]黄玲琴等.SiCOhmiccontacts.AppliedPhysicsLetters,100:263503(2012)
[01]朱巧智等.SiO2/SiCinterfacetransitionregion.AppliedPhysicsLetters,99:082102(2011)

译著：《半导体材料与器件表征技术》，大连理工大学出版社，2008年6月
原著：《SemiconductorMaterialandDeviceCharacterization》byDieterK.Schroder

科研工作:

。

研究方向:
1.传感器与传感网；飞行器智能电子控制及安全SensorChip,Intelligentelectronicsafetycontrol
2.半导体SiC、GaN器件科学SemiconductorSiC&GaNDevicePhysicsandTechnology
3.半导体缺陷物理学SemiconductorDefectPhysics
4.集成电路技术Si3DP/GSIcTechnologies

课题组重视学术交流、国际化和对外合作，近五年，指导研究生在国际顶级学术期刊发表学术论文十余篇，培养的研究生多次获得博士生优秀论文单项奖学金和国家优秀学生奖学金，深受业界欢迎。

Prof.DejunWANGreceivedtheB.S.andM.S.degreeinsemiconductorsfromJilinUniversity,Changchun,ChinaandthePh.D.degreeinmaterialssciencefromTsinghuaUniversity,Beijing,China.HehasworkedinPekingUniversity,NagoyaUniversityandNaraInstituteofScienceandTechnology.
Prof.WangjoinedDalianUniversityofTechnology(DUT)in2004asaprofessorinthefieldofmicroelectronics.Hisresearchinterestsaresemiconductordefectphysics,semiconductorSiC&GaNdevicephysicsandtechnology,Si3DP/GSIctechnologies,sensorchip,andintelligentelectronicsafetycontrol.TherecentworkmainlyincludesthephysicsandtechnologyofSiO2/SiCinterfaces,metal-SiCcontacts,oxidationtechnologyofSiCsemiconductor,andthedevelopmentofGaNpowerdevices.

Publications
[10]刘冰冰等.PassivationofSiCsurface.AppliedPhysicsLetters,104:202101(2014)
[09]江..滢等.FieldisolationforGaNMOSFETs.Semicond.Sci.&Tech.,29:055002(2014)
[08]王青鹏等.CharacterizationofGaNMOSFETs.IEEETrans.onElectronDevices,61:498(2014)
[07]朱巧智等.Electricalandphysicalpropertiesof4H-SiCMOSinterface.PhysicaB,432:89(2014)
[06]李文波等.OxidationofstepedgesonSiCsurfaces.AppliedPhysicsLetters,103:211603(2013)
[05]朱巧智等.PassivationofSiO2/SiCinterfacetraps.AppliedPhysicsLetters,103:062105(2013)
[04]黄玲琴等.Barrierofmetal/SiCcontacts.AppliedPhysicsLetters,103:033520(2013)
[03]李文波等.InsightintotheOxidationanddefectsofSiC.PhysicalReviewB,87:085320(2013)
[02]黄玲琴等.SiCOhmiccontacts.AppliedPhysicsLetters,100:263503(2012)
[01]朱巧智等.SiO2/SiCinterfacetransitionregion.AppliedPhysicsLetters,99:082102(2011)

译著：《半导体材料与器件表征技术》，大连理工大学出版社，2008年6月
原著：《SemiconductorMaterialandDeviceCharacterization》byDieterK.Schroder

教育背景:

1997.92000.7大连理工大学应用化学硕士1988.91992.7吉林化工学院化学工程学士