个人简述:

吕业刚，男，1982年出生于湖南。主要从事相变存储器、硫系纳米线及微纳器件的相关研究，在Nano lett., APL等知名期刊上发表SCI学术论文30余篇，获得国家授权发明专利7件，2014年获得上海市优秀研究生成果奖(学位论文)，2017年被评为“宁波大学最受欢迎的青年教师”。

研究方向:相变存储器、硫系纳米线制备及其微纳器件

拟招生专业及人数：通信与信息系统或电子与通信工程硕士研究生1名

主要经历及任职：

2013．05-至今，宁波大学信息科学与工程学院

2014.06-2014.12，德国卡尔斯鲁厄理工学院访问学者

2010.03-2013.01，中科院上海微系统与信息技术研究所，微电子学，工学博士学位；

2000.09-2007.07，湘潭大学，测控技术与物理电子学，工学学士与硕士学位；

科研工作:

[1] Lu Y., Stegmaier M., Nukala P., Giambra M. A., Ferrari S., Busacca A., Pernice W. H. P., and Agarwal R. Mixed-Mode Operation of Hybrid Phase-Change Nanophotonic Circuits. Nano. Lett., 2017, 17(1): 150-155.

[2] Lu Y., Wang M., Song S., Xia M., Jia Y., shen X., Wang G., Dai S., and Song Z. Multilevel data storage in multilayer phase change material. Appl. Phys. Lett., 2016, 109(17): 173103.

[3] Li Z., Lu Y., Ma Y., Song S., Shen X., Wang G., Dai S., and Song Z. Changes in electrical and structural properties of phase-change Ge-Sb-Te films by Zr addition. J Non-Cryst Solids, 2016, 452: 9-13.

[4] Lu Y., Song S., Shen X., Song Z., Wang G., and Dai S. Study on phase change properties of binary GaSb doped Sb–Se film. Thin Solid Films, 2015, 589(0): 215-220.

[5] Wang M., Lu Y., Shen X., Wang G., Li J., Dai S., Song S., and Song Z. Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5. Crystengcomm, 2015, 17(26): 4871-4876.

[6] Lu Y., Song S., Shen X., Wu L., Song Z., Liu B., Dai S., and Nie Q. Investigation of Ga8Sb34Se58 Material for Low-Power Phase Change Memory. ECS Solid State Letters, 2013, 2(10): P94-P96.

[7] Lu Y., Song S., Shen X., Song Z., Wu L., Wang G., and Dai S. Low-power phase change memory with multilayer TiN/W nanostructure electrode. Appl. Phys. A-Mater. Sci. Process., 2014, 117(4): 1933-1940.

[8] Lu Y., Song S., Shen X., Wang G., Wu L., Song Z., Liu B., and Dai S. Phase change characteristics of Sb-rich Ga–Sb–Se materials. J. Alloys Compd., 2014, 586(0): 669-673.

[9] Ma Y., Lu Y., Li Z., Shen X., Wang G., Liu Y., and Dai S. Tunable Phase-Change Performance of Sb-Te-Se Film for Phase Change Memory. ECS Journal of Solid State Science and Technology, 2015, 5(3): P160-P163.

[10] Lu Y., Zhang Z., Song S., Shen X., Wang G., Cheng L., Dai S., and Song Z. Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory. Appl. Phys. Lett., 2013, 102(24): 241907.

主持国家自然科学基金两项、省部级两项等。